Achieving the stringent zero defect strategy in the industry is becoming a major challenge for silicon carbide substrate manufacturing. Both the switch from 150 to 200 mm wafers and the general shift in their focus away from pure silicon are making the processes struggling to achieve sufficient yields and reliability.

LOTOS 3D measurement systems help implementing the zero-defect strategy toward high-yield production processes without any scrap. Shortly after crystal growing, silicon carbide boules can be inspected for chipping, geometric sizes and false polytypes or doping, eliminating scrap in subsequent production processes.

LOTOS checks all common parameters such as: